(China (Mainland))
Product Summary
The PH9038 is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Parametrics
Absolute maximum ratings: (1)drain-source voltage: 30 V at 25 ℃ ≤ Tj ≤ 150 ℃; (2)drain-gate voltage: 30 V at 25 ℃ ≤ Tj ≤ 150 ℃; RGS = 20 kΩ; (3)gate-source voltage: -20 to 20 V; (4)drain current: 39 V at VGS = 10 V; Tj = 100 ℃, 63 A at VGS = 10 V; Tmb = 25 ℃; (5)peak drain current: 214 A at tp ≤ 10 μs; pulsed; Tmb = 25 ℃; (6)total power dissipation: 62.5 W at Tmb = 25 ℃; (7)storage temperature: -55 to 150 ℃; (8)junction temperature: -55 to 150 ℃.
Features
Features: (1)High efficiency due to low switching and conduction losses; (2)Suitable for logic level gate drive sources.
Diagrams
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 PH9025L T/R |
NXP Semiconductors |
MOSFET PWR-MOS |
Data Sheet |
Negotiable |
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PH9025L,115 |
NXP Semiconductors |
MOSFET PWR-MOS |
Data Sheet |
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PH9030AL,115 |
NXP Semiconductors |
MOSFET Trans MOSFET N-CH 30V 63A 5-Pin(4+Tab) |
Data Sheet |
Negotiable |
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PH9030L,115 |
NXP Semiconductors |
MOSFET Trans MOSFET N-CH 30V 63A 5-Pin |
Data Sheet |
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